2007. 8. 9 1/6 semiconductor technical data kmb050N60PA n channel mos field effect transistor revision no : 1 general description it s mainly suitable for low viltage applications such as automotive, dc/dc converters and a load switch in battery powered applications features v dss = 60v, i d = 50a drain-source on resistance : r ds(on) =18m (max.) @v gs = 10v mosfet maximum rating (ta=25 unless otherwise noted) dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 g d s characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss 25 v drain current dc i d * 50 a pulsed (note 1) i dp 200 a drain-source diode forward current i s 50 a drain power dissipation p d * 25 120 w maximum junction temperature t j -55 175 storage temperature range t stg -55 175 note1) pulse test : pulse width 10 s duty cycle 1% characteristic symbol rating unit thermal resistance, junction-to-ambient r thja 62.5 /w thermal resistance, junction-to-case r thjc 1.24 /w thermal characteristics equivalent circuit free datasheet http:///
2007. 8. 9 2/6 kmb050N60PA revision no : 1 mosfet electrical characteristics (ta=25 unless otherwise noted) note 1) pulse test : pulse width 10 s, duty cycle 1%. note 2) essentially independent of operating temperature. characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 60 - - v drain cut-off current i dss v ds =60v, v gs =0v, - - 1 a gate leakage current i gss v gs = 25v, v ds =0v - - 100 na gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v drain-source on resistance r ds(on) v gs =10v, i d =25a - 16 18 forward transconductance g fs v ds =25v, i d =25a - 22 - dynamic input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1050 1365 pf output capacitance c oss - 70 90 reverse transfer capacitance c rss - 460 600 total gate charge q g v ds = 48v, v gs = 10v, i d =25a (note1,2) - 49 59 nc gate-source charge q gs - 10 - gate-drain charge q gd - 13 - turn-on delay time t d(on) v dd = 30v i d =25a r g = 25 (note1,2) - 20 50 turn-on rise time t r - 100 210 ns turn-off delay time t d(off) - 80 170 turn-off fall time t f - 85 185 diode electrical characteristics (ta=25 unless otherwise noted) characteristic symbol test condition min. typ. max. unit diode forward voltage v sd i sd =50a, v gs =0v - - 1.5 v reverse recovery time t rr v gs =0v, i s =50a, dif/dt=100a/ s - 50 - 701 a 2 2 kmb 050n60p product name lot no 1 1 marking free datasheet http:///
2007. 8. 9 3/6 kmb050N60PA revision no : 1 drain current i d (a) fig 4. r ds(on) - i d on - resistance r ds(on) ( ? ) 0.00 0.03 0.05 0.04 0.01 0.02 0100 50 150 200 v gs = 10v v gs = 20v fig 6. r ds(on) - t j 0 50 -100 -50 100 200 150 normalized on resistance 0.0 0.5 2.5 1.0 1.5 2.0 junction temperature t j ( ) c v gs = 10v i ds = 25a normalized breakdown voltage bv dss fig 3. bv dss - t j -100 -50 0.8 0.9 1.2 1.0 1.1 050 100 200 150 junction temperature tj ( ) c v gs = 0v i ds = 250 fig 5. i s - v sd 0.2 0.4 0.8 0.6 1.2 1.0 1.6 1.4 reverse drain current i s (a) source - drain voltage v sd (v) 10 0 10 1 10 2 175 c 25 c fig 1. i d - v ds drain - source voltage v ds (v) 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 drain current i d (a) v gs = 0v 250 s pulse test 15 10 6 5 4.5 4 3.5 25 v gs =3v fig 2. i d - v gs drain - source voltage v gs (v) 0246810 0 20 40 60 80 100 drain current i d (a) tc=-55 c 100 free datasheet http:///
2007. 8. 9 4/6 kmb050N60PA revision no : 1 drain current i d (a) gate - charge q g (nc) fig 7. c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 12 10 6 2 4 8 40 20 30 50 10 35 15 25 45 5 0 fig 8. q g - v gs fig 9. safe operation area capacitance (pf) gate - source voltage v gs (v) 0 1000 2000 500 1500 3000 3500 2500 10 -1 10 0 10 1 10 1 10 1 10 3 10 0 10 0 10 2 10 2 10 -1 frequency = 1mhz 0 10 30 50 20 40 60 75 175 150 125 50 100 25 drain current i d (a) i d = 50a fig 10. i d - t j c rss t c = 25 t j = 150 single nonrepetitive pulse c c operation in this area is limited by r ds(on) 1ms 10ms 100 s dc square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.01 0.1 1 fig 11. r th - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm duty=0.5 single pulse 0. 05 0 .02 0 . 0 1 0.2 0 .1 junction temperature t j ( ) c transient thermal impedance [ / w] c c oss c iss free datasheet http:///
2007. 8. 9 5/6 kmb050N60PA revision no : 1 - gate charge i d i d v ds v gs v gs v ds v ds v gs 1.0 ma 0.8 x v dss 0.5 x v dss 0.5 x v dss schottky diode 10v -4.5v 6 ? r l q g q gd q gs q t r t d(off) t off t d(on) t on t f t p 90% 10% - resistive load switching - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v gs free datasheet http:///
2007. 8. 9 6/6 kmb050N60PA revision no : 1 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd 0.8 x v dss i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm free datasheet http:///
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